Reduction of threading defects in GaN grown on vicinal SiC„0001... by molecular-beam epitaxy
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Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6HSiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 1 00] and [11 2 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films ...
متن کاملGrowth of GaN on SiC(0001) by Molecular Beam Epitaxy
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 10 cm for edge dislocations and 1 10 cm for screw dislocations are achieved in GaN films of 1 m thickness grown under optimal conditions. Reve...
متن کاملStrain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates
The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is investigated by X-ray Diffraction (XRD), Raman Scattering and Cathodoluminescence (CL). The strain relaxation mechanisms are analyzed for each miscut angle. At a microscopic scale, the GaN layer grown on on-axis substrate ...
متن کاملOptimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
We have investigated optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected in both the narrow x-ray peakwidths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower xray peakwidth for both symmetric and asy...
متن کاملShallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
A number of wurtzite GaN epilayers directly grown on 4H-SiC ~0001! misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ;70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the...
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تاریخ انتشار 2000